MRFE61VPK25H W CW over MHz, 50 V high ruggedness RF power LDMOS transistor for ISM, broadcast, aerospace and mobile radio. Freescale’s MRFE6VP61 Wideband RF Power LDMOS MOSFETs are high ruggedness devices that are designed for use in high VSWR industrial, broadcast . LDMOS RF MOSFET Transistors are available at Mouser Electronics. NXP / Freescale, RF MOSFET Transistors RF Power LDMOS Transistor for Consumer.
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The broad frequency range of these new transistors means they can also be used as universal driver devices for a wide array of additional RF applications.
NXP LDMOS (previously Freescale) Models Do Not Simulate Correctly – Help – AWR Knowledgebase
They allow us to analyse our traffic. Turnkey board for in-vehicle Qi wireless charging. The Airfast technology platform allows Freescale to improve performance in frequency, range and gain while addressing a host of other customer needs such as ease-of-use and flexibility.
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75 W Freescale LDMOS RF transistor for land mobile radio
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Richardson RFPD have announced immediate availability and full design support capabilities for a new laterally diffused metal oxide semiconductor LDMOS transistor targeting land mobile radio from Freescale Semiconductor. These cookies allow you to share your favourite content of the Freescalf with other people via social networks.
Freescale LDMOS – Ruggedized!
The high gain, ruggedness and wideband performance of the device makes it ideal for large-signal, common source amplifier applications in mobile radio equipment.
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Airfast RF power solutions are designed to simultaneously meet the pdmos of increased efficiency, peak power and signal bandwidth, while addressing the persistent pressure to reduce costs.
Skip to main content. Freescale is also adding a higher power device to this family, called the AFT27SN, which delivers 10 W of peak power.