gap. The LEDs realized using two differently doped semiconductors that are the same material is called a homojunction. When they are realized using different. homojunction and heterojunction materials, cross sectional measurements are advantageous. . This includes the fabrication of LEDs, lasers, photodiodes, and . Major issues in regular (homojunction) LEDs: high concentration of electrons and holes is hardly achievable due to diffusion (the characteristic length of.

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The Al content in the electron-blocking layer is higher than in the p-type confinement layer. In homojunctions, carriers are distributed over the diffusion length.

Band diagram of a an abrupt ledd heterojunction and b a graded heterojunction of two semiconductors with different bandgap energy. The p-type confinement layer consists of a lightly doped layer close to the active region and a higher doped layer further away from the active layer adapted from Kazarinov and Pinto, Carrier capture and escape in a double hetero- structure.

Chapter 7

Retrieved from ” https: Dependence of the homojuncyion efficiency of an AlGaInP double heterostructure LED emitting at nm on n-type confinement homojuction doping concentration after Sugawara et al.

P-n junction under a zero bias and b forward bias. P-n homojunction under a zero and b forward bias. This is not a necessary condition as the only requirement is that the same semiconductor same band gap is found on both sides of the junction, in contrast to a heterojunction. Unsourced material may be challenged and removed.


This article does not cite any sources. Illustration of two crystals with mismatched lattice constant resulting in dislocations at or near the interface between the two semiconductors.


The dark hoomjunction forming a cross-hatch pattern are due to misfit dislocations after Fitzgerald et al. Articles lacking sources from December All articles lacking sources. Under forward bias conditions, minority carriers diffuse into the neutral re- gions where they recombine. Views Read Edit View history. This page was last edited on 14 Augustat P-n junction displacement process caused by excessive doping of the cladding region.

Chapter 4

Illustration of a double heterostructure consisting of a bulk or quantum well active region and two confinement layers. Fermi level EFn and subband level E0 in a a double heterostructure and b a quantum well structure. Band diagram of a forward-biased double heterostructure. The abrupt junction is more resistive than the graded junction due to the electron barrier forming at the abrupt junctions homojundtion Schubert et al.

The barrier-well interface of the abrupt junction is more resistive than the graded junction due to barriers forming at the interfaces. Band homounction of a an abrupt double heterostructure and b a graded double heterostructure. In most practical cases a homojunction occurs at the interface between an n-type donor doped and p-type acceptor doped semiconductor such as siliconthis is called a p-n junction.

Optical intensity emitted by In0. In heterojunctions, carriers are confined to the well region. Cathodo-luminescence image of a 0. Dependence of the luminous efficiency of an AlGaInP double heterostructure LED emitting at nm on the p-type confinement layer doping concentration after Sugawara et al.

Part a shows no p-n junction displacement.

Dependence of the internal differential quantum efficiency emitted photons per injected electron on temperature for different p-type doping levels in the cladding layer after Kazarinov and Pinto, In heterojunctions, carriers are confined by the heterojunction barriers. Please help improve this article by adding citations to reliable sources.


Part b shows p-n junction displacement caused by high Zn doping of the upper cladding region after Schubert et al.

Room-temperature current-voltage characteristics of p-n junctions made from different semiconductors. Free carrier distribution homojubction a a homojunction and b a heterojunction under forward bias conditions. From Wikipedia, the free encyclopedia.

Also shown is the carrier distribution in the active layer.

Dependence of the luminous efficiency of an AlGaInP double heterostructure LED emitting at nm on the active layer doping concentration after Sugawara et al.

A homojunction is a semiconductor interface that occurs between layers of similar semiconductor material, these materials have equal band gaps but typically have different doping. In homojunctions, carriers diffuse, on average, over the diffusion lengths Ln and Lp before recombining. The figure reveals an optimum active region thickness of 0.

Methods for evaluating diode series resistance. An n-type to n-type junction, for example, would be considered a homojunction if the doping levels are different. The structure uses Zn as a p-type dopant. By using this site, you agree to the Terms of Use and Privacy Policy. The different doping level will cause band bendingand depletion region will be formed at the interface, as shown in the right figure.

The confinement layers are frequently called cladding layers. December Learn how and when to remove this template message.